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| MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. * * * * * DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms TO-247AE Package Pb-Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ, Tstg MJW21191 MJW21192 150 150 5.0 8.0 16 2.0 125 0.65 - 65 to + 150 Unit Vdc Vdc Vdc Adc Adc W W/_C _C 8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W TO-247 CASE 340L STYLE 3 123 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RqJC RqJA Max 1.0 50 Unit _C/W _C/W 1 BASE 3 EMITTER 2 COLLECTOR x A Y WW G = 1 or 2 = Assembly Location = Year = Work Week = Pb-Free Package MJW2119x AYWWG Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1000 PNP C, CAPACITANCE (pF) 100 NPN ORDERING INFORMATION Device Package TO-247 TO-247 (Pb-Free) TO-247 TO-247 (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail 10 MJW21191 MJW21191G 1.0 MJW21192 1.0 10 100 VR, REVERSE VOLTAGE (V) 1000 MJW21192G 30 Units/Rail 30 Units/Rail Figure 1. Typical Capacitance @ 25C *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 1 June, 2005 - Rev. 2 Publication Order Number: MJW21192/D MJW21192 (NPN), MJW21191 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 1.6 Adc) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Note 2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = hfe* ftest. fT 4.0 - MHz hFE 15 5.0 VCE(sat) - - VBE(on) - 1.0 2.0 2.0 Vdc 100 - Vdc - VCEO(sus) 150 ICES - IEBO - 10 10 mAdc - mAdc Vdc Symbol Min Max Unit 1.0 D = 0.5 TRANSIENT THERMAL RESISTANCE (NORMALIZED) P(pk) 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = r(t) RJC RJC = 1.65C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 10 100 1000 Figure 2. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 2 MJW21192 (NPN), MJW21191 (PNP) NPN -- MJW21192 100 IC, COLLECTOR CURRENT (AMPS) 10 ms 100 IC , COLLECTOR CURRENT (AMPS) 10 ms 100 ms 10 250 ms PNP -- MJW21191 100 ms 10 250 ms 1.0 1.0 0.1 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0.1 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 3. NPN -- MJW21192 Safe Operating Area Figure 4. PNP -- MJW21191 Safe Operating Area TYPICAL CHARACTERISTICS NPN -- MJW21192 1000 1000 50C PNP -- MJW21191 100 100C 25C h FE , DC CURRENT GAIN h FE, DC CURRENT GAIN 50C 100C 25C 100 10 10 1.0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) Figure 5. NPN -- MJW21192 VCE = 2.0 V DC Current Gain Figure 6. PNP -- MJW21191 VCE = 2.0 V DC Current Gain http://onsemi.com 3 MJW21192 (NPN), MJW21191 (PNP) NPN -- MJW21192 1000 1000 50C h FE , DC CURRENT GAIN 100C 25C 100 PNP -- MJW21191 h FE , DC CURRENT GAIN 50C 100C 25C 100 10 10 1.0 0.01 0.1 1.0 10 100 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. NPN -- MJW21192 VCE = 5.0 V DC Current Gain 1.0 1.0 Figure 8. PNP -- MJW21191 VCE = 5.0 V DC Current Gain V, VOLTAGE (VOLTS) 25C 0.1 V, VOLTAGE (VOLTS) 100C 0.1 100C 25C 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 9. NPN -- MJW21192 VCE(sat) IC/IB = 5.0 1.0 100C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 25C 0.1 1.0 10 Figure 10. PNP -- MJW21191 VCE(sat) IC/IB = 5.0 0.1 100C 25C 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 11. NPN -- MJW21192 VCE(sat) IC/IB = 10 SPACE Figure 12. PNP -- MJW21191 VCE(sat) IC/IB = 10 http://onsemi.com 4 MJW21192 (NPN), MJW21191 (PNP) NPN -- MJW21192 10 10 PNP -- MJW21191 V, VOLTAGE (VOLTS) 1.0 25C 100C V, VOLTAGE (VOLTS) 50C 1.0 25C 100C 0.1 50C 0.1 0.001 1.0 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 13. NPN -- MJW21192 VCE = 2.0 V VBE(on) Curve Figure 14. PNP -- MJW21191 VCE = 2.0 V VBE(on) Curve http://onsemi.com 5 MJW21192 (NPN), MJW21191 (PNP) PACKAGE DIMENSIONS TO-247 CASE 340L-02 ISSUE D -T- C -B- U N A 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 --- 4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 --- 0.177 0.140 0.144 0.242 BSC 0.113 0.123 E L 4 -Q- 0.63 (0.025) P -Y- M TB M K W F 2 PL G D 3 PL 0.25 (0.010) M J H YQ DIM A B C D E F G H J K L N P Q U W S STYLE 3: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJW21192/D |
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